PRODUCT DETAILS
  • PRODUCT:GaAs Infrared Emitting Diode SEP8505/8506

  • MODEL:SEP8505/8506
  • PRODUCT MANUFACTURER:Honeywell
  • DETAILS:
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DETAILS:
GaAs Infrared Emitting Diode SEP8505/8506
DETAILS:

GaAs Infrared Emitting Diode SEP8505/8506

 

Description:

The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other provide a simple method of polarity indentification

 

Features:

1)        T-1 package

2)        15°(nominal) beam angle

3)        935 nm wavelength

4)        Consistent on-axis optical properties

5)        Mechanically and sprctrally matched to SDP8405 phototransistor and SDP8105 photodarlington

6)        Temperature range: -40——+85

 

model

 

beam angle(°)

wavelengthnm

SEP8505

2.-4.0 mW/cm2

15

935

SEP8506

0.33-0.52 mW/cm2

50

935

SEP8705

2.7-7.8 mW/cm2

15

880

  SEP8736

1.7-3 mW/cm2

10

  880

 

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